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SVM硅片（美國進口）
高質量進口硅片，適合做柵壓調控等研究。
平均貨期1~2個月，建議提前預定。￥ 0.00
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Bi2SeTe2
Bi2SeTe2 is a topological insulator vdW layered crystal. It has the same crystal structure as Bi2Se3 and Bi2Te3, it only differs in that Se and Te atoms are alloyed to retain impressive topological insulator state rivaling to Bi2Te3. Bi2SeTe3 crystal composition can be written as Bi2Se3(x)Te3(1-x) where x=1/3. Bi2SeTe2 crystals have been synthesized using three (3) different methods, chemical vapor transport (CVT), flux zone growth, and Bridgman technique. Owing to its high crystallinity and high purity we strongly recommend flux zone or Bridgman growth methods as a synthesis choice. Our crystals measure world record <1cm in lateral sizes, they are perfectly oriented along 0001 direction, and are ready for exfoliation. Crystals are stable in air thus no special storage advised.
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Nb2SiTe4
Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Nb2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. Our Nb2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.
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Ni2SiTe4
Si(NiTe2)2 also known as SiNi2Te4 or Ni2SiTe4 is a layered semimetal with exciting magnetotransport and quantum properties. It crystallizes in monoclinic phase (P121/c1) wherein Ni and Si cations are sandwiched between Te anion atoms forming the individual layers. Ni2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. The material is rather new and its properties remain largely unknown. Our Ni2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.
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SiTe2
SiTe2 is a new layered crystal produced by 2Dsemiconductors using conventional chemical vapor transport technique (CVT) at 99,9995% purity rating. SiTe2 currently remains largely unexplored and many exciting properties are awaiting to be discovered. Early theoretical predictions show that they exhibit unique thermal conduction and electronic transport properties.Currently, each order contains one single crystal that measures a few mm in size (~3-4mm) due to its hard growth characteristics.
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FePSe3
FePSe3 is a layered van der Waals (vdW) crystal, and it has been predicted to have an Ising-type antiferromagnetic ordering from bulk to the monolayer limit. FePSe3 is a semiconductor with an optical band gap of 1.3 eV in the bulk limit, while its monolayer band gap value is an on-going research in the field. Another open question remains as to if the Neel temperature depends on the material thickness and the number of layers. Our FePSe3 crystals were grown using flux zone growth technique to produce FePSe3 crystals without any phase separation. Thus, we guarantee that FePSe3 crystals will have no FeSe, FeP, or FeSe2 minority phases, but the crystal is 100% single phase FePSe3 with proven 99.9999% purity rate which is ideal for magnetism, electronics, and optical measurements.
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MnPSe3
MnPSe3 is a 2D Heisenberg-type magnetic material with Neel temperature at 77K [1] MnPSe3 crystals have been synthesized through chemical vapor transport (CVT) or flux transport technique (similar to CVT except chemical transport agent is not utilized to attain high crystallinity and purity) with confirmed 99.999% purity and high crystallinity. Each crystal measures few mm in size, and one order includes 3 pieces of MnPSe3 crystals. MnPSe3 flakes are perfectly oriented along 0001 (c-axis) direction. To date, MnPSe3 has been mostly studied in the bulk form. It has antiferromagnetic response but undergoes antiferromagnetic to ferromagnetic transition (AFM to FM) at low temperatures. More recently, MnPSe3 sheets have also been demonstrated to be an efficient photocatalytic and electrocatalytic material.All these products are handled using non-magnetic tweezers and in non-magnetic environment with tools that are free of magnetic impurities to ensure intrinsic magnetic properties can be confidently measured and probed.
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ZrTe3
Zirconium tritelluride (ZrTe3) is a semimetal exhibiting charge density wave (CDW) at around 60-70K and superconducting phenomena (Tc~2-5K). It belongs to the group-IV transition metal trichalcogenides. Our crystals have been engineered to attain rather low record defect density (1E9-1E10cm-2) to yield environmentally stable ZrTe3 crystals. Please see Raman spectrum in this document; CVT grown crystals age in air rather quickly whereas flux grown crystals exhibit their true Raman signatures. In fact, Te defects are well-known cause for environmental degradation effects as well as reduced material quality and performace.
ZrTe3 crystals exhibit semimetallic behavior with charge density waves (CDW) phenomena at temperatures below ~70K. Material undergoes superconducting transition at ~2.7K in bulk but it is anticipated to have larger Tc for mono- and few-layers depending on the substrate monolayer interaction. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Our crystals come with guaranteed CDW behavior and stability.￥ 0.00
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BiInTe3
BiInTe3 layered crystals crystallize in M2X3 structure where M stands for Bi and In atoms at fixed 50% alloy ratios. BiInTe3 crystals were synthesized using modified Bridgman technique under careful growth condition to ensure there is no phase separation into Bi2Te3 and In2Te3. Despite their predicted topological properties, their experimental properties remain largely unknown. Each order contains around 3-5mm sized crystals that are ready for exfoliation with superior environmental stability.
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NbTe4
NbTe4 crystal is a quasi-1D CDW material belonging to space group P4/mcc. In these materials, the metal cation atoms quasi-linear chains along the anisotropy axis. NbTe4 undergoes a strong lattice reconstruction near room temperature to form an incommensurate charge density wave (CDW) phase and further exhibits pressure induced superconductivity. Our NbTe4 crystals were synthesized using self flux technique at 99.9998% purity levels with excellent electronic properties. Each order contains a single crystal measuring <5mm in size.
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SnPSe3
DESCRIPTIONSnPSe3 is a layered crystal belonging to the metal selenophosphites family of van der Waals crystal. They assume the chemical formula of MPSe3 with M=Sn. It has been shown that SnPSe3 crystals have ~1.49 eV optical band gap which suitably falls within the visible spectra. They have been used mainly for 2D catalysis but their quantum properties in the monolayer or few-layer form still remains unknown. Our SnPSe3 crystals have been synthesized using modified Bridgman technique to achieve 99.9995% or higher purity and these crystals exhibit remarkable exfoliation characteristics.
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Red Phosphorene ribbons
Red phosphorene ribbons are new class of anisotropic semiconductors (~1.7 eV band gap). These quasi-1D crystals have been synthesized through high pressure anvil cell method to realize exfoliation grade quasi-1D red phosphorene nanoribbons. Our product consists of large size (~1cm) crystals containing fiber / needle like red phosphorene sheets as shown in product images. Product has rated 99.9995% purity and high electronic, structural, and optical grade quality.
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藍膜
美國UST公司工業膠帶。
專業的硅工藝轉移專用膠帶，殘膠較少，解離得到薄層的概率更高。￥ 0.00
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PDMS
美國Gel Pak公司
轉移二維材料專用凝膠。
厚度為1.7mil，6mil,17mil
尺寸10*10cm￥ 0.00
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BSCCO 晶體
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Bi2SeTe2晶體
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大塊鱗片石墨
本石墨片是由德國進口的優質石墨片，本產品擁有易剝離，剝離所得石墨烯面積大的特點。其質量已經得到專業石墨烯研究者的肯定。機械剝離石墨烯潔凈程度高，易獲取，對于實驗研究，石墨烯面積足夠大。本品牌自2006年開始專注于石墨烯科研樣品的研發，至今已達十年之久，是值得信賴的科研產品。
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國產硅片
P(100),2-4歐姆/厘米，氧化層厚度3000埃。我們為您方便機械剝離和CVD生長各種二維材料，轉移各種二維材料異質結，以及測試各種二維材料場效應、光電器件、低溫輸運提供最好的二氧化硅襯底！
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PET基底石墨烯膜
石墨烯層數可定制，尺寸可定制
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石墨烯/納米銀線復合膜
石墨烯層數，尺寸可定制。
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泡沫鎳基 3D 多層石墨烯
可選擇是否去鎳，尺寸可定制
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硅基底石墨烯
石墨烯層數，尺寸可定制。
單層覆蓋率≥90%￥ 0.00
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石英基底石墨烯
石墨烯層數，尺寸可定制。
單層覆蓋率≥90%￥ 0.00
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銅基底石墨烯
石墨烯，尺寸可定制，
覆蓋率≥90%
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低維材料轉移基底
我們的研發團隊可以將各種單層轉移到各種基材上，包括PET，石英和SiO2/Si等等，而不會嚴重影響材料質量。
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機械剝離法大尺寸單層二維材料
機械剝離法制備單層二維材料。至少能保證5μm~20μm的尺寸。
樣品干凈，顆粒少而且結構沒有缺陷。
十余位工程師為您服務，有3~5年的機械剝離操作經驗。￥ 0.00
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機械剝離法大尺寸定制石墨烯
機械剝離法制備的石墨烯。至少能保證10μm*50μm的尺寸。1層~3層（可定制）
樣品干凈，顆粒少而且結構沒有缺陷。
十余位工程師為您服務，有3~5年的機械剝離操作經驗。￥ 0.00
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機械剝離法大尺寸單層MoS2
機械剝離法制備的單層二硫化鉬。至少能保證10μm*50μm的尺寸。
樣品干凈，顆粒少而且結構沒有缺陷。
十余位工程師為您服務，有3~5年的機械剝離操作經驗。￥ 0.00
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TlInS2（硫化銦鉈）
具有TlInS2化學式的新型層狀單硫元素。該產品通過將Tl合金化成InS而形成Tl0.5In0.5S或TlInS2，得到2.1eV帶隙半導體。它具有分層結構，可以進行剝離。單晶尺寸大于5mm至1cm。
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TlGaSe2（硒化鎵鉈）
具有TlGaSe2化學式的新型分層單硫元素?；旧贤ㄟ^將T 1合金化成GaSe而形成Tl0.5Ga0.5Se或TlGaSe2，以產生1.95eV帶隙半導體。它具有分層結構，可以進行剝離。
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真空干燥箱
數碼管顯示溫度控制器； 鋼化玻璃門；
0B 控溫范圍：50~200℃；
1B 控溫范圍：50~250℃； 溫度波動 ±1℃；
真空度＜ 133pa；真空泵另配隔板：1 塊（0B），2 塊（1B￥ 0.00
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恒溫恒濕培養箱
控溫范圍：0~65℃； 溫度波動：±1℃； 溫度均勻度：±2℃
濕度：外置超聲波加濕器濕度范圍：50~90%RH； 濕 度 波 動 ：±5~8%RH 消毒裝置：紫外殺菌燈 觀察窗：復門帶觀察窗 附件：RS485 接口 (II 型 )
微型打印機（III 型）
（II型可選配 RS485 轉 USB 轉接￥ 0.00
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SPX-II 型生化培養箱
控溫范圍：5℃ ~50℃
溫度波動度：±1℃
溫度均勻度：±2℃
鏡面不銹鋼內膽，四角半圓弧設計外門帶觀察窗
環保制冷劑
隔板：3 塊（80L 為 2 塊）￥ 0.00
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CVD單層二硫化鉬
基底尺寸：1cm*1cm
基底類型：藍寶石，PET，石英和SiO2 / Si
單元格參數 a = b = 0.313nm，c = 1.230nm，α=β= 90°，γ= 120°￥ 0.00
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CrBr3（溴化鉻）
單晶尺寸：~10mm
水晶結構：六角形
單元格參數 a = 0.630，c = 1.838nm，α=β= 90°，γ= 120°￥ 0.00
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WTe2（二碲化鎢）
單晶尺寸：~10mm
水晶結構：正交晶體
單元格參數a = 0.348nm，b = 0.625nm，c = 1.405nm，α=β=γ= 90°￥ 0.00
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TaS2（2H二硫化鉭）
單晶尺寸：~10mm
水晶結構：六角形
單元格參數 a = b = 0.331nm，c = 1.207nm，α=β= 90，γ= 120°￥ 0.00
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PtTe2（二碲化鉑）
單晶尺寸：~2mm~3mm
水晶結構：六角形
單元格參數 a = b = 0.4000nm，c = 0.5192nm，α=β= 90°，γ= 120°￥ 0.00
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HOPG（高定向熱解石墨）
單晶尺寸：~12mm
水晶結構：六角形
單元格參數 a = b = 0.246，c = 0.667nm，α=β= 90°，γ= 120°￥ 0.00
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WSe2（二硒化鎢）
單晶尺寸：~10mm
水晶結構：六角形
單元格參數 a = b = 0.328nm，c = 1.298nm，α=β= 90°，γ= 120°￥ 0.00
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ReS2（二硫化錸）
單晶尺寸：~8mm
水晶結構：三斜晶系
單元格參數 a = 0.634，b = 0.640nm，c = 0.645nm，α= 106.74°，β= 119.03°，γ= 89.97°￥ 0.00
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MoWS2（硫化鎢鉬）
單晶尺寸：~6mm
水晶結構：六角形
單元格參數取決于合金中的組成：a = b = 0.31 -0.33nm，c = 1.21-1.29nm，α=β= 90°，γ= 120°￥ 0.00
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MoSe2（2H二硒化鉬）
單晶尺寸：~10mm
水晶結構：六角形
單元格參數：a = b = 0.329nm，c = 1.289nm，α=β= 90°，γ= 120°
品牌：HQ Graphene￥ 0.00
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MoTe2（2H二碲化鉬）
單晶尺寸：~10mm
水晶結構：六角形
單元格參數 a = b = 0.353nm，c = 1.396nm，α=β= 90，γ= 120°￥ 0.00
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MoS2（2H二硫化鉬）
單晶尺寸：~10mm
水晶結構：六角形
單元格參數 a = b = 0.315nm，c = 1.229nm，α=β= 90°，γ= 120°￥ 0.00
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GeS（硫化鍺）
單晶尺寸：~10mm
水晶結構：正交
單元格參數 a = 1.450，b = 0.364nm，c = 0.430nm，α=β=γ= 90°￥ 0.00
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GaSe（2H相硒化鎵）
尺寸：~10mm
水晶結構：六角形
單元格參數 a = b = 0.374nm，c = 1.592nm，α=β= 90°，γ= 120°￥ 0.00
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Black-Phosphorus（黑磷）
單晶尺寸：~10mm
水晶結構：正交C
單元格參數 a = 0.331nm，b = 1.048，c = 0.437nm，α=β=γ= 90°￥ 0.00
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WS2（2H二硫化鎢）
單晶尺寸：~10mm
水晶結構：六角形
單元格參數 a = b = 0.315nm，c = 1.227nm，α=β= 90°，γ= 120°￥ 0.00
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h-BN（六方氮化硼）
單晶尺寸：1mm~1.5mm
水晶結構：六角形
單元格參數 a = b = 0.2502nm，c = 0.6617nm，α=β= 90°，γ= 120°￥ 0.00
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GaS（α相硫化鎵）
單晶尺寸：~10mm
水晶結構：六角形
單元格參數a = 0.360，b = 0.640nm，c = 1.544nm，α=β= 90°，γ= 120°￥ 0.00
